Hyunsoo Yang: Difference between revisions

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Bi<sub>2</sub>Se<sub>3</sub> is a prototypical three dimensional topological insulator (TI), which is expected to exhibit a  
Bi<sub>2</sub>Se<sub>3</sub> is a prototypical three dimensional topological insulator (TI), which is expected to exhibit a  
high spin orbit torque (SOT) efficiency due to the spin-textured topological surface states. However, very few studies have  
high spin orbit torque (SOT) efficiency due to the spin-textured topological surface states. However, very few studies have  
reported the SOT phenomena in ferromagnet/TI by electrical measurements [1,2].  
reported the SOT phenomena in ferromagnet/TI by electrical measurements [1,2]. Here we investigate the SOT efficiency in ferromagnet/Bi<sub>2</sub>Se<sub>3</sub>  structures at different temperatures by two different techniques such as spin torque  
 
ferromagnetic resonance (ST-FMR) and spin pumping. In the ST-FMR measurements on Co<sub>40</sub>Fe<sub>40</sub>B<sub>20</sub> (5 nm)/Bi<sub>2</sub>Se<sub>3</sub> (20 nm), where the charge currents directly flow through devices, we find that the SOTs show a steep increase as the temperature decreases to 50 K, and the SOT efficiency increases abruptly from 0.047 at 300 K to 0.42 below 50 K [3].  
Here we investigate the SOT efficiency in ferromagnet/Bi2Se3 structures at different temperatures by  
Moreover, we observe a significant out-of-plane SOT efficiency in the low temperature range. We exclude the possible mechanisms from the spin Hall effect in Bi<sub>2</sub>Se<sub>3</sub>  bulk and Rashba-split states at the interface. Finally, we conclude that our results clearly demonstrate that the topological surface states are the origin of SOTs in CoFeB/Bi<sub>2</sub>Se<sub>3</sub> systems. We also report the SOT efficiency and spin diffusion length at different temperatures in Ni<sub>81</sub>Fe<sub>19</sub>/Bi<sub>2</sub>Se<sub>3</sub> by the spin pumping technique, where no direct charge current flows thru the device [4]. The SOT efficiency of Bi2Se3 is found to be ~0.01 at room temperature. In addition, the spin diffusion length in Bi<sub>2</sub>Se<sub>3</sub> is evaluated to be 6.2 nm at room temperature. Both the SOT efficiency and spin diffusion length in Bi<sub>2</sub>Se<sub>3</sub> increase at low temperatures. We will discuss possible reasons for the difference between the SOT efficiency from ST-FMR and that from spin pumping measurements.
 
two different techniques such as spin torque ferromagnetic resonance (ST-FMR) and spin pumping.
 
In the ST-FMR measurements on Co40Fe40B20 (5 nm)/Bi2Se3 (20 nm), where the charge currents  
 
directly flow through devices, we find that the SOTs show a steep increase as the temperature decreases  
 
to 50 K, and the SOT efficiency increases abruptly from 0.047 at 300 K to 0.42 below 50 K [3]. Moreover,  
 
we observe a significant out-of-plane SOT efficiency in the low temperature range. We exclude the  
 
possible mechanisms from the spin Hall effect in Bi2Se3 bulk and Rashba-split states at the interface.  
 
Finally, we conclude that our results clearly demonstrate that the topological surface states are the  
 
origin of SOTs in CoFeB/Bi2Se3 systems.  
 
We also report the SOT efficiency and spin diffusion length at different temperatures in  
 
Ni81Fe19/Bi2Se3 by the spin pumping technique, where no direct charge current flows thru the device [4].  
 
The SOT efficiency of Bi2Se3 is found to be ~0.01 at room temperature. In addition, the spin diffusion  
 
length in Bi2Se3 is evaluated to be 6.2 nm at room temperature. Both the SOT efficiency and spin  
 
diffusion length in Bi2Se3 increase at low temperatures. We will discuss possible reasons for the  
 
difference between the SOT efficiency from ST-FMR and that from spin pumping measurements.


==References==
==References==
* [1] A. R. Mellnik et al., ''Spin-transfer torque generated by a topological insulator'', Nature '''511''', 449(2014).
* [1] A. R. Mellnik et al., ''Spin-transfer torque generated by a topological insulator'', Nature '''511''', 449(2014).
* [2] Y. Fan et al., ''Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure'', Nat. Mater. '''13''', 699 (2014).
* [2] Y. Fan et al., ''Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure'', Nat. Mater. '''13''', 699 (2014).
* [3] Y. Wang, P. Deorani, K. Banerjee, N. Koirala, M. Brahlek, S. Oh, and H. Yang, “Topological surface states originated spin-orbit torques in Bi<sub>2</sub>Se<sub>3</sub>'', [http://dx.doi.org/10.1103/PhysRevLett.114.257202 Phys. Rev. Lett. 114, 257202 (2015)].
* [3] Y. Wang, P. Deorani, K. Banerjee, N. Koirala, M. Brahlek, S. Oh, and H. Yang, ''Topological surface states originated spin-orbit torques in Bi<sub>2</sub>Se<sub>3</sub>'', [http://dx.doi.org/10.1103/PhysRevLett.114.257202 Phys. Rev. Lett. '''114''', 257202 (2015)].
* [4] P. Deorani, J. Son, K. Banerjee, N. Koirala, M. Brahlek, S. Oh, and H. Yang, ''Observation of inverse  
* [4] P. Deorani, J. Son, K. Banerjee, N. Koirala, M. Brahlek, S. Oh, and H. Yang, ''Observation of inverse spin Hall effect in bismuth selenide'', [http://dx.doi.org/10.1103/PhysRevB.90.094403 Phys. Rev. B '''90''', 094403 (2014)].
spin Hall effect in bismuth selenide'', [http://dx.doi.org/10.1103/PhysRevB.90.094403 Phys. Rev. B, 90, 094403 (2014)].

Latest revision as of 10:38, 12 August 2015

Affiliations

  • Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore

Title

  • Spin dynamics in Bi2Se3/ferromagnet heterostructures

Abstract

Bi2Se3 is a prototypical three dimensional topological insulator (TI), which is expected to exhibit a high spin orbit torque (SOT) efficiency due to the spin-textured topological surface states. However, very few studies have reported the SOT phenomena in ferromagnet/TI by electrical measurements [1,2]. Here we investigate the SOT efficiency in ferromagnet/Bi2Se3 structures at different temperatures by two different techniques such as spin torque ferromagnetic resonance (ST-FMR) and spin pumping. In the ST-FMR measurements on Co40Fe40B20 (5 nm)/Bi2Se3 (20 nm), where the charge currents directly flow through devices, we find that the SOTs show a steep increase as the temperature decreases to 50 K, and the SOT efficiency increases abruptly from 0.047 at 300 K to 0.42 below 50 K [3]. Moreover, we observe a significant out-of-plane SOT efficiency in the low temperature range. We exclude the possible mechanisms from the spin Hall effect in Bi2Se3 bulk and Rashba-split states at the interface. Finally, we conclude that our results clearly demonstrate that the topological surface states are the origin of SOTs in CoFeB/Bi2Se3 systems. We also report the SOT efficiency and spin diffusion length at different temperatures in Ni81Fe19/Bi2Se3 by the spin pumping technique, where no direct charge current flows thru the device [4]. The SOT efficiency of Bi2Se3 is found to be ~0.01 at room temperature. In addition, the spin diffusion length in Bi2Se3 is evaluated to be 6.2 nm at room temperature. Both the SOT efficiency and spin diffusion length in Bi2Se3 increase at low temperatures. We will discuss possible reasons for the difference between the SOT efficiency from ST-FMR and that from spin pumping measurements.

References

  • [1] A. R. Mellnik et al., Spin-transfer torque generated by a topological insulator, Nature 511, 449(2014).
  • [2] Y. Fan et al., Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure, Nat. Mater. 13, 699 (2014).
  • [3] Y. Wang, P. Deorani, K. Banerjee, N. Koirala, M. Brahlek, S. Oh, and H. Yang, Topological surface states originated spin-orbit torques in Bi2Se3, Phys. Rev. Lett. 114, 257202 (2015).
  • [4] P. Deorani, J. Son, K. Banerjee, N. Koirala, M. Brahlek, S. Oh, and H. Yang, Observation of inverse spin Hall effect in bismuth selenide, Phys. Rev. B 90, 094403 (2014).