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where <math> N </math> is the number of "conducting channels" assumed to have perfect transmission <math> T=1 </math> in ballistic transport. Find resistance in Ohm of such  
where <math> N </math> is the number of "conducting channels" assumed to have perfect transmission <math> T=1 </math> in ballistic transport. Find resistance in Ohm of such  
contact modeled by a two-dimensional wire (joining the macroscopic reservoirs) in the form of a strip of width <math> W = 1.75 \lambda_F </math>. Assume that conduction electrons in the wire can be described by the free-particle Schrodinger equation with the Dirichlet [i.e., <math> \Psi({\bf r})=0 </math>] boundary conditions along the lateral edges of the strip.
contact modeled by a two-dimensional wire (joining the macroscopic reservoirs) in the form of a strip of width <math> W = 1.75 \lambda_F </math>. Assume that conduction electrons in the wire can be described by the free-particle Schrodinger equation with the Dirichlet [i.e., <math> \Psi(\mathbf{r})=0 </math>] boundary conditions along the lateral edges of the strip.

Revision as of 13:33, 20 October 2009

Pick four out of six problems below. Students who try to solve all six problems will be given extra credit.


Problem 1

R

Problem 2

fdfd

Problem 3

{\bf Classical point contact conductance:} The Sharvin formula for the electrical conductance of an extremely short contact area A between two pieces of metal is given by

G=2e2hkF2A4π

where kF is the Fermi wavelength. Derive the Sharvin formula by considering the total current flowing through a hole of area $A$ in a thin insulating barrier separating two free electron gases with different Fermi energies---the gas on the left has Fermi energy $\varepsilon_F^0 + eV$, while the gas on the right has Fermi energy $\varepsilon_F^0$, where $V$ is the applied voltage bias. Use purely macroscopic arguments.

In a free electron gas, the number of electrons with energies between E and E+dE traveling at an angle between θ and θ+dθ with respect to a given axis is

2nEθdEdθ=g(E)2sinθdθdE,

where g(E) is the density of states in three dimensions.


Problem 4

{\bf Quantum point contact conductance:} When the size of the contact from Problem 3 becomes comparable to Fermi wavelength λF=2π/kF, the contact enters the quantum regime where its conductance follows from the Landauer formula:

G=2e2hN

where N is the number of "conducting channels" assumed to have perfect transmission T=1 in ballistic transport. Find resistance in Ohm of such contact modeled by a two-dimensional wire (joining the macroscopic reservoirs) in the form of a strip of width W=1.75λF. Assume that conduction electrons in the wire can be described by the free-particle Schrodinger equation with the Dirichlet [i.e., Ψ(𝐫)=0] boundary conditions along the lateral edges of the strip.